PART |
Description |
Maker |
MGFC40V6472 |
6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET 6.4- 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET 6.4 - 7.2GHz频段10W的内部匹配砷化镓场效应管
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric, Corp.
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MGFC39V6472A04 MGFC39V6472A |
6.4 ~ 7.2GHz BAND 8W INTERNALLY MATCHED GaAs FET
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http:// MITSUBISHI[Mitsubishi Electric Semiconductor]
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MGFC41V3642 |
3.6 - 4.2GHz BAND 12W INTERNALLY MATCHED GaAs FET
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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MGFC40V3742A |
3.7 - 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
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Mitsubishi Electric Corporation
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MGFC42V3742A |
3.7- 4.2GHz BAND 16W INTERNALLY MATCHED GaAs FET
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Mitsubishi Electric Semiconductor
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MGFC40V3742_04 MGFC40V3742 MGFC40V374204 |
3.7 ~ 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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MGFC39V6472A C396472A |
6.4 - 7.2GHz BAND 8W INTERNALLY MATCHED GaAs FET From old datasheet system
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http:// Mitsubishi Electric Semiconductor
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MGFC39V3742A C393742A |
From old datasheet system 3.7 - 4.2GHz BAND 8W INTERNALLY MATCHED GaAs FET
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Mitsubishi Electric Semiconductor
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MGFC45V6472A C456472A |
6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET From old datasheet system
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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MA501CAC001 |
Heavy Duty Screw Mount Antenna ?GPS-GALILEO/Dual-Band 2.4?.2GHz
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Taoglas antenna solutio...
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BFR92W Q62702-F1488 |
NPN Silicon RF Transistor (For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA) NPN硅射频晶体管(对于宽带放大器高达2GHz和快速的非饱和由0.5毫安0毫安的集电极电流开关) NPN Silicon RF Transistor (For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA) L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR From old datasheet system
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SIEMENS AG SIEMENS[Siemens Semiconductor Group]
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